Metal Film deposition is processed with our specially modified sputtering machines. Our special MRC sputtering systems allows us to process multiple films in one process step without breaking vacuum. Processing multiple film stacks under vacuum provides better adhesion between metal layers. Our metal film deposition is free of clamp marks and we have the capability to process any wafer size up to 300mm with a +/-5% uniformity. Our metal film deposition service includes single layer and/or the combination of the following elements: Ta, TaN, Cu, Ti, TiN, Al, Al-Si-Cu, Al-Cu, Al-Si, TiW, W, WN, WSi, SiC, Cr, Cr2O3, and TiO2.

Metal Film Deposition Services

Refractory Metals: Ta, TaN, Ti, TiN, TiW, W, WN, WSi, and Cr Sputtering

• 2" ~ 12" Diameter Wafers from 300 ~ 3,000 (Å)

Conductive Metals: Cu, Al, Al-Cu, Al-Si and Al-Cu-Si Sputtering

• 2" ~ 12" Diameter Wafers from 500 ~ 5,000 (Å)
• 2" ~ 12" Diameter Wafers from 5,000 ~ 10,000 (Å) for AlCu and Cu
• 2" ~ 12" Diameter Wafers from 10,000 ~ 15,000 (Å) for Cu only

Dielectric Films: SiC, TiO2, and Cr2O3

• 2" ~ 12" Diameter Wafers from 200 ~ 1,500 (Å)